Structure and chemistry of passivated SiC/SiO2 interfaces

被引：36

作者：

Dycus, J. Houston ^{[1
]}

Xu, Weizong ^{[1
]}

Lichtenwalner, Daniel J. ^{[2
]}

Hull, Brett ^{[2
]}

Palmour, John W. ^{[2
]}

LeBeau, James M. ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Box 7907, Raleigh, NC 27695 USA

[2] Wolfspeed, Power Devices R&D, Res Triangle Pk, NC 27709 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 20期

基金：

美国国家科学基金会;

关键词：

POWER DEVICES; NITRIC-OXIDE; CARBIDE;

D O I：

10.1063/1.4951677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Here, we report on the chemistry and structure of 4H-SiC/SiO2 interfaces passivated either by nitric oxide annealing or Ba deposition. Using aberration corrected scanning transmission electron microscopy and spectroscopy, we find that Ba and N remain localized at SiC/SiO2 interface after processing. Further, we find that the passivating species can introduce significant changes to the near-interface atomic structure of SiC. Specifically, we quantify significant strain for nitric oxide annealed sample where Si dangling bonds are capped by N. In contrast, strain is not observed at the interface of the Ba treated samples. Finally, we place these results in the context of field effect mobility. Published by AIP Publishing.

引用

页数：5

共 31 条

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