The leakage currents of amorphous silicon thin-film transistors: Channel charge emission

被引：0

作者：

Lemmi, F ^{[1
]}

Street, RA ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 12期

关键词：

amorphous materials; flat panel displays; leakage currents; thermally simulated currents; thin-film transistors; transient response; x-ray imaging;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of channel charge emission on the transient leakage currents of amorphous silicon thin-film transistors are described. Up to one hundred devices connected in parallel are used to allow measurement of currents below 1 fA. We develop a procedure to separate the charge emission current from the injection and generation currents, based on the dependence on the drain-to-source voltage. The channel emission current is isolated and measured from 10(-3) to 100 S after the TFT is switched off. The current decays approximately as 1/t and provides information about the density of states in aSi:H, The channel charge emission also influences the read-out properties of active matrix arrays.

引用

页码：2399 / 2403

页数：5

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