Giant dielectric constant dominated by Maxwell-Wagner relaxation in Al2O3/TiO2 nanolaminates synthesized by atomic layer deposition

被引:65
作者
Li, Wei [1 ]
Auciello, Orlando [1 ,2 ]
Premnath, Ramesh N. [1 ,3 ]
Kabius, Bernd [4 ]
机构
[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[2] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
[3] Univ Puerto Rico, Inst Funct Nanomat, San Juan, PR 00931 USA
[4] Argonne Natl Lab, Ctr Electron Microscopy, Argonne, IL 60439 USA
关键词
THIN-FILMS; CACU3TI4O12;
D O I
10.1063/1.3413961
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nanolaminates consisting of Al2O3 and TiO2 oxide sublayers were synthesized by using atomic layer deposition to produce individual layers with atomic scale thickness control. The sublayer thicknesses were kept constant for each multilayer structure, and were changed from 50 to 0.2 nm for a series of different samples. Giant dielectric constant (similar to 1000) was observed when the sublayer thickness is less than 0.5 nm, which is significantly larger than that of Al2O3 and TiO2 dielectrics. Detailed investigation revealed that the observed giant dielectric constant is originated from the Maxwell-Wagner type dielectric relaxation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3413961]
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页数:3
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