Radiation-Tolerant Flexible Large-Area Electronics Based on Oxide Semiconductors

被引：46

作者：

Cramer, Tobias ^{[1
]}

Sacchetti, Allegra ^{[1
]}

Lobato, Maria Teresa ^{[2
,3
]}

Barquinha, Pedro ^{[2
,3
]}

Fischer, Vincent ^{[4
]}

Benwadih, Mohamed ^{[4
]}

Bablet, Jacqueline ^{[4
]}

Fortunato, Elvira ^{[2
,3
]}

Martins, Rodrigo ^{[2
,3
]}

Fraboni, Beatrice ^{[1
]}

机构：

[1] Univ Bologna, Dipartimento Fis & Astron, Viale Berti Pichat 6-2, I-40127 Bologna, Italy

[2] Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT i3N, Campus Caparica, P-2829516 Caparica, Portugal

[3] CEMOP UNINOVA, Campus Caparica, P-2829516 Caparica, Portugal

[4] CEA Grenoble, LITEN, 17 Rue Martyrs, F-38054 Grenoble, France

来源：

ADVANCED ELECTRONIC MATERIALS | 2016年 / 2卷 / 07期

关键词：

THIN-FILM TRANSISTORS; LIGHT-EMITTING-DIODES; MOS OXIDES; DEVICES; DAMAGE; IRRADIATION; FABRICATION; TECHNOLOGY; DESIGN;

D O I：

10.1002/aelm.201500489

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Large-area electronics for applications in environments with radioactive contamination or medical X-ray detectors require materials and devices resistant to continuous ionizing radiation exposure. Here the superior X-ray radiation hardness of oxide thin film transistors (TFTs) based on gallium-indium-zinc oxide is demonstrated, when compared to organic ones. In the experiments both TFTs are subjected to X-ray radiation and their performances are monitored as a function of total ionizing dose. Flexible oxide TFTs maintain a constant mobility of 10 cm(2) V-1 s(-1) even after exposure to doses of 410 krad(SiO2), whereas organic TFTs lose 55% of their transport performance. The exceptional resistance of oxide semiconductors ionization damage is attributed to their intrinsic properties such as independence of transport on long-range order and large heat of formation.

引用

页数：8

共 37 条

[1] Transparent Current Mirrors With a-GIZO TFTs: Neural Modeling, Simulation and Fabrication [J].