FDTD simulation of quasi-optical device grids

被引：0

作者：

Ren, JS ^{[1
]}

Wang, XD ^{[1
]}

Hwu, RJ ^{[1
]}

机构：

[1] Univ Utah, Dept Elect Engn, Salt Lake City, UT 84112 USA

来源：

1997 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS I-III | 1997年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A FDTD analysis of grid characteristics of millimeter wave quasi-optical array is presented in this paper. The grid impedance and equivalent circuit parameters are obtained by the FDTD simulations through proper treatment of metal grids on the interface between air and GaAs substrate. The comparisons are made among the FDTD results, analytical solutions, and experimental data. provides more accurate results than analytical solutions and proves to be an excellent tool for analyzing quasi-optical device grids.

引用

页码：849 / 852

页数：4