Hydrogen sensitive gas sensor based on porous silicon/TiO2-x structure

被引：23

作者：

Arakelyan, V. M.

Galstyan, V. E.

Martirosyan, Kh. S.

Shahnazaryan, G. E.

Aroutiounian, V. M.

Soukiassian, P. G.

机构：

[1] CEA, DSM, DRECAM,SPCSI, Lab SIMA, F-91191 Gif Sur Yvette, France

[2] Yerevan State Univ, Dept Phys Semicond & Microelect, Yerevan 0025, Armenia

[3] Univ Paris 11, Dept Phys, F-91405 Orsay, France

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2007年 / 38卷 / 1-2期

关键词：

hydrogen gas sensor; room temperature; porous silicon; metal oxide layer;

D O I：

10.1016/j.physe.2006.12.037

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Porous silicon (PS) layer was formed by electrochemical anodization on a p-type Si surface. Thereafter, n-type TiO2-x thin film was deposited onto the PS surface by electron-beam evaporation. Pt catalytic layer and An electrical contacts for further measurements were deposited onto the PS/TiO2-x structure by ion-beam sputtering. Current-voltage characteristic, sensitivity to different concentration of hydrogen and resistance change of obtained structures versus time were examined. Results of measurements have shown that the current-voltage characteristics of structures are similar to that of diode. High sensitivity to hydrogen of obtained structures was also detected. Note that all measurements were carried out at room temperature. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：219 / 221

页数：3

共 6 条

[1] A novel high-sensitive Pd/InP hydrogen sensor fabricated by electroless plating [J].