Area-Efficient Fast-Speed Lateral IGBT With a 3-D n-Region-Controlled Anode

被引：47

作者：

Chen, Wensuo ^{[1
]}

Zhang, Bo ^{[1
]}

Li, Zhaoji ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 05期

关键词：

Forward drop; negative differential resistance (NDR); segment-anode-n-p-n-LIGBT (SA-NPN-LIGBT); shorted-anode lateral insulated-gate bipolar transistor (SA-LIGBT); turn-OFF time; 3-D n-region-controlled anode; GATE BIPOLAR-TRANSISTOR;

D O I：

10.1109/LED.2010.2043638

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel lateral insulated-gate bipolar transistor (LIGBT) structure on an silicon-on-insulator (SOI) substrate is proposed and discussed. The 3-D n-region-controlled anode concept makes this new structure effectively suppress the negative-differential-resistance (NDR) regime in conducting state, and what is more, during turn-OFF state, there are two effective paths for electron extraction, and the switching speed is very fast. As simulation results show, without sacrificing the high current-handling capability, the ratios of turn-OFF times for the proposed structure compared to that of the segment-anode-n-p-n-LIGBT presented earlier and the conventional LIGBT are 1 : 1.57 and 1 : 35.58, respectively. Due to the 3-D anode structure, the proposed device has efficient area usage and can be fabricated by the conventional SOI high-voltage IC process, so it is a promising device used in power ICs.

引用

页码：467 / 469

页数：3

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