Improvement of optical properties of multilayer quantum dots self-formed in GaP/InP short-period superlattices on GaAs(311)A

被引：5
作者：
Watanabe, D
Asahi, H
Noh, JH
Fudeta, M
Mori, J
Matsuda, S
Asami, K
Gonda, S
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
[2] Kwansei Gakuin Univ, Sch Sci, Sanda, Hyogo 6691337, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 7B期
关键词：
quantum dot; self-formation; GaP/InP short-period superlattice; InGaP/InAlP superlattice; PL; EL; LED;
D O I：
10.1143/JJAP.39.4601
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Multilayer quantum dots (MQDs) structures are fabricated on a GaAs(311)A substrate by sandwiching the quantum dots (QDs) self-formed in (GaP)(1.5)(InP)(1.88) short-period superlattices (SLs) with InGaP/InAlP SL layers instead of InGaP layers, as barrier and cladding layers, Narrower photoluminescence (PL) and electroluminescence (EL) linewidths and weaker temperature variations are observed for the modified MQDs compared with the previously reported best values for MQDs with InGaP barrier and cladding layers. PL and EL peak energies for the modified MQDs are higher than those for the previous MQDs. These results suggest the enhancement of carrier confinement by the use of InGaP/InAlP SL layers as barrier and cladding layers. The temperature dependence of EL intensity is also improved.
引用
收藏
页码：4601 / 4603
页数：3
相关论文
共 6 条
[1]   Time-resolved photoluminescence study of strain-induced quantum dots self-formed in GaP/InP short-period superlattice [J].
Fudeta, M ;
Asahi, H ;
Asami, K ;
Narukawa, Y ;
Kawakami, Y ;
Noh, JH ;
Mori, J ;
Watanabe, D ;
Fujita, S ;
Gonda, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (9AB) :L1006-L1008
[2]   High density of self-organized quantum dots formed in (GaP)(n)(InP)(m) short period superlattices grown on GaAs (N11) [J].
Kim, SJ ;
Asahi, H ;
Takemoto, M ;
Noh, JH ;
Asami, K ;
Gonda, S .
APPLIED SURFACE SCIENCE, 1997, 113 :97-102
[3]   Self-organized dot/columnar structures and quasi-perfect CuPt-type ordering in (GaP)(n)(InP)(n) superlattices grown on GaAs (N11) substrates by gas source molecular beam epitaxy [J].
Kim, SJ ;
Asahi, H ;
Takemoto, M ;
Asami, K ;
Takeuchi, M ;
Gonda, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (08) :4225-4231
[4]   Vertical quantum confinement effect on optical properties of strain-induced quantum dots self-formed in GaP/InP short-period superlattices [J].
Kim, SJ ;
Asahi, H ;
Asami, K ;
Takemoto, M ;
Fudeta, M ;
Gonda, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B) :1540-1547
[5]   Growth temperature dependence of self-formation process of quantum dot structures in GaP/InP short-period superlattices grown on GaAs (311)A substrate [J].
Noh, JH ;
Asahi, H ;
Fudeta, M ;
Watanabe, D ;
Mori, J ;
Gonda, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (4B) :2521-2523
[6]   Scanning tunneling microscopy study on self-formation process of quantum dot structures by the growth of GaP/InP short-period superlattices on GaAs(311)A substrate [J].
Noh, JH ;
Asahi, H ;
Kim, SJ ;
Gonda, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (6B) :3793-3795
1