100 GHz dynamic frequency divider in SiGe bipolar technology

被引：28

作者：

Rylyakov, A ^{[1
]}

Klapproth, L

Jagannathan, B

Freeman, G

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] SHF Commun Technol AG, D-12247 Berlin, Germany

[3] IBM Microelect Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 02期

关键词：

D O I：

10.1049/el:20030164

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 100 GHz dynamic frequency divider and a 62 GHz static frequency divider are presented, both using a -3.8 V supply and designed in IBM's 0.12 mum SiGe technology with f(T) of 207 GHz and f(MAX) of 285 GHz. Static divider performance is compared to three other static dividers designed in IBM's 0.18 mum SiGe BiCMOS technology.

引用

页码：217 / 218

页数：2

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