100 GHz dynamic frequency divider in SiGe bipolar technology

被引：28
|
作者：
Rylyakov, A [1 ]
Klapproth, L
Jagannathan, B
Freeman, G
机构：
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] SHF Commun Technol AG, D-12247 Berlin, Germany
[3] IBM Microelect Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 02期
关键词：
D O I：
10.1049/el:20030164
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 100 GHz dynamic frequency divider and a 62 GHz static frequency divider are presented, both using a -3.8 V supply and designed in IBM's 0.12 mum SiGe technology with f(T) of 207 GHz and f(MAX) of 285 GHz. Static divider performance is compared to three other static dividers designed in IBM's 0.18 mum SiGe BiCMOS technology.
引用
收藏
页码：217 / 218
页数：2
相关论文
共 50 条
  • [1] 168 GHz Dynamic Frequency Divider in SiGe:C Bipolar Technology
    Knapp, Herbert
    Meister, Thomas F.
    Liebl, Wolfgang
    Aufinger, Klaus
    Schaefer, Herbert
    Boeck, Josef
    Boguth, Sabine
    Lachner, Rudolf
    PROCEEDINGS OF THE 2009 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2009, : 190 - +
  • [2] 71.8 GHz static frequency divider in a SiGe bipolar technology
    Wurzer, M
    Böck, J
    Knapp, H
    Aufinger, K
    Meister, TF
    PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2002, : 216 - 219
  • [3] 96 GHz static frequency divider in SiGe bipolar technology
    Rylyakov, A
    Zwick, T
    GAAS IC SYMPOSIUM - 25TH ANNUAL TECHNICAL DIGEST 2003, 2003, : 288 - 290
  • [4] 96-GHz static frequency divider in SiGe bipolar technology
    Rylyakov, A
    Zwick, T
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (10) : 1712 - 1715
  • [5] 42GHz static frequency divider in a Si/SiGe bipolar technology
    Wurzer, M
    Meister, TF
    Schafer, H
    Knapp, H
    Bock, J
    Stengl, R
    Aufinger, K
    Franosch, M
    Rest, M
    Moller, M
    Rein, HM
    Felder, A
    1997 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE - DIGEST OF TECHNICAL PAPERS, 1997, 40 : 122 - 123
  • [6] 27 GHz monolithically integrated VCO with frequency divider in SiGe bipolar technology
    Ritzberger, G
    Böck, J
    2002 3RD INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS, 2002, : 62 - 65
  • [7] A 47-217 GHz Dynamic Frequency Divider in SiGe Technology
    Al-Eryani, Jidan
    Knapp, Herbert
    Li, Hao
    Aufinger, Klaus
    Wursthorn, Jonas
    Majied, Soran
    Maurer, Linus
    2015 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2015, : 125 - 128
  • [8] 38 GHz low-power static frequency divider in SiGe bipolar technology
    Ritzberger, G
    Böck, J
    Knapp, H
    Treitinger, L
    Scholtz, AL
    2002 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL IV, PROCEEDINGS, 2002, : 413 - 416
  • [9] A 136-GHz Dynamic Divider in SiGe Technology
    Laskin, Ekaterina
    Rylyakov, Alexander
    2009 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUTS IN RF SYSTEMS, DIGEST OF PAPERS, 2009, : 168 - +
  • [10] 86 GHz static and 110 GHz dynamic frequency dividers in SiGe bipolar technology
    Knapp, H
    Wurzer, M
    Meister, TF
    Aufinger, K
    Böck, J
    Boguth, S
    Schäfer, H
    2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2003, : 1067 - 1070
12345