InGaN/GaN multi-quantum dot light-emitting diodes

It has been demonstrated that InGaN/GaN blue light-emitting diodes (LEDs) with multiple quantum dot (MQD) were successfully fabricated by metal-organic chemical vapor deposition (MOCVD). We have formed nanoscale InGaN self- assembled QDs in the well layers of the active region with a typical 3-nm height and 10-nm lateral dimension. With a 20-mA DC injection current, the forward voltage was 3.1 V and 3.5 V for MQD LED and conventional nitride-based multi-quantum well (MQW) LED with the same structure, respectively. It was also found that EL peak position of the MQD LED is more sensitive to the amount of injection current, as compared to the conventional MQW LEDs. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.