Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions

被引：41

作者：

Fakhr, A. ^{[1
]}

Haddara, Y. M. ^{[1
]}

LaPierre, R. R. ^{[2
]}

机构：

[1] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada

[2] McMaster Univ, Ctr Emerging Device Technol, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 16期

基金：

加拿大自然科学与工程研究理事会;

关键词：

LIQUID-SOLID MECHANISM; CORE-SHELL NANOWIRES; III-V NANOWIRES; OPTICAL-PROPERTIES; GAAS NANOWIRES; HETEROSTRUCTURES; SUPERLATTICES; MOVPE;

D O I：

10.1088/0957-4484/21/16/165601

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

InGaP nanowires (NWs) were grown by the Au-assisted method in a gas source molecular beam epitaxy system. The dependence of InGaP composition, morphology and stacking fault density was studied with respect to group III and V impingement rate and size of the Au particle. Compositional analysis showed that the NWs had an In-rich core and a Ga-rich shell structure. The In incorporation within the NW became limited as the Au seed particle size diminished or the group III and V flux decreased. The NWs had wurtzite (WZ) crystal structure with zinc blende (ZB) segments (stacking faults). The density of the stacking faults decreased as the group III flux decreased and the group V flux increased.

引用

页数：7

共 40 条

[1] An empirical potential approach to wurtzite-zinc-blende polytypism in group III-V semiconductor nanowires [J].

Akiyama, T ;

Sano, K ;

Nakamura, K ;

Ito, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11) :L275-L278

[2] Structural stability and electronic structures of InP nanowires: Role of surface dangling bonds on nanowire facets [J].

Akiyama, Toru ;

Nakamura, Kohji ;

Ito, Tomonori .

PHYSICAL REVIEW B, 2006, 73 (23)

[3]

[Anonymous], BINARY ALLOY PHASE D

[4] Optical properties of rotationally twinned InP nanowire heterostructures [J].

Bao, Jiming ;

Bell, David C. ;

Capasso, Federico ;

Wagner, Jakob B. ;

Martensson, Thomas ;

Tragardh, Johanna ;

Samuelson, Lars .

NANO LETTERS, 2008, 8 (03) :836-841

[5]

Caroff P, 2009, NAT NANOTECHNOL, V4, P50, DOI [10.1038/nnano.2008.359, 10.1038/NNANO.2008.359]

[6] Self-directed growth of AlGaAs core-shell nanowires for visible light applications [J].

Chen, Chen ;

Shehata, Shyemaa ;

Fradin, Cecile ;

LaPierre, Ray ;

Couteau, Christophe ;

Weihs, Gregor .

NANO LETTERS, 2007, 7 (09) :2584-2589

[7] Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy [J].

Colombo, C. ;

Spirkoska, D. ;

Frimmer, M. ;

Abstreiter, G. ;

Morral, A. Fontcuberta I. .

PHYSICAL REVIEW B, 2008, 77 (15)

[8] GaAs Core-Shell Nanowires for Photovoltaic Applications [J].

Czaban, Josef A. ;

Thompson, David A. ;

LaPierre, Ray R. .

NANO LETTERS, 2009, 9 (01) :148-154

[9] Failure of the vapor-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires [J].

Dick, KA ;

Deppert, K ;

Mårtensson, T ;

Mandl, B ;

Samuelson, L ;

Seifert, W .

NANO LETTERS, 2005, 5 (04) :761-764

[10] Control of III-V nanowire crystal structure by growth parameter tuning [J].

Dick, Kimberly A. ;

Caroff, Philippe ;

Bolinsson, Jessica ;

Messing, Maria E. ;

Johansson, Jonas ;

Deppert, Knut ;

Wallenberg, L. Reine ;

Samuelson, Lars .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (02)

← 1 2 3 4 →