Mullite-type Ga4B2O9: structure and order disorder phenomenon

被引:24
作者
Cong, Rihong [1 ]
Yang, Tao [1 ]
Li, Kuo [1 ]
Li, Hongmei [1 ]
You, Liping [2 ]
Liao, Fuhui [1 ]
Wang, Yingxia [1 ]
Lin, Jianhua [1 ]
机构
[1] Peking Univ, Beijing Natl Lab Mol Sci, State Key Lab Rare Earth Mat Chem & Applicat, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
[2] Peking Univ, Electron Microscopy Lab, Sch Phys, Beijing 100871, Peoples R China
基金
中国国家自然科学基金;
关键词
CRYSTAL-STRUCTURE; STRUCTURE REFINEMENT; THERMAL-EXPANSION; SILLIMANITE; ALUMINOBORATE; BORALSILITE; SYSTEMS; BOROSILICATES; AL16B6SI2O37; SPECTROSCOPY;
D O I
10.1107/S0108768110000650
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ga4B2O9, an aluminium-free mullite-type compound, was prepared by a boric-acid flux method and its structure was determined using powder X-ray diffraction techniques, in combination with transmission electron microscopy, solidstate B-11 MAS-NMR and IR spectroscopies. GaO6 octahedra share edges in a trans-manner forming one-dimensional chains along the b direction, and the chains are further cross-linked by GaO5, BO3 and BO4 groups into a three-dimensional mullite-type structure. The disorder of the inter-chain groups results in a small unit cell for Ga4B2O9 compared with that for Al4B2O9, an ordered compound with a superstructure. By deconstructing the structure of Ga4B2O9, we were able to identify the fundamental building units and their linking rules which can be used to reconstruct the ordered and disordered structures. For Ga4B2O9, we found that the structure is intrinsically disordered within the ac plane, but ordered along the b axis. The three-dimensional structure can then be constructed by stacking the disordered ac sheets along the b axis (1 2 b) with a 1 2 a shift. The fundamental building units and exclusivity rules identified in this gallium borate mullite may also be useful for understanding other related mullite phases. The structure analysis applying the proposed method is used to recognize the structural features of Al4B2O9 and Al18B4O33.
引用
收藏
页码:141 / 150
页数:10
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