Concurrent synthesis and boron-doping of amorphous carbon films by focused ion beam-assisted chemical vapor deposition

被引：3

作者：

Matsumoto, Ryo ^{[1
]}

Sadki, El Hadi S. ^{[2
]}

Tanaka, Hiromi ^{[3
]}

Yamamoto, Sayaka ^{[4
,5
]}

Adachi, Shintaro ^{[6
]}

Younis, Adnan ^{[7
]}

Takeya, Hiroyuki ^{[4
]}

Takano, Yoshihiko ^{[4
,5
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Young Scientists ICYS, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan

[2] United Arab Emirates Univ, Coll Sci, Phys Dept, Al Ain, U Arab Emirates

[3] Natl Inst Technol, Yonago Coll, 4448 Hikona, Yonago, Tottori 6838502, Japan

[4] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan

[5] Univ Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058577, Japan

[6] Kyoto Univ Adv Sci, Nagamori Inst Actuators, Ukyo Ku, Kyoto 6158577, Japan

[7] Univ Bahrain, Coll Sci, Dept Phys, Zallaq, Bahrain

来源：

THIN SOLID FILMS | 2021年 / 730卷

关键词：

Focused ion beam; Chemical vapor deposition; Amorphous carbon film; Boron doping; THIN-FILMS; SUPERCONDUCTIVITY;

D O I：

10.1016/j.tsf.2021.138704

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A method to directly deposit boron-doped amorphous carbon films via focused ion beam-assisted chemical vapor deposition is reported. The presence of boron in the deposited films was verified by X-ray photoelectron spectroscopy. Raman spectroscopy analysis confirmed the amorphousity of the films. The as-deposited films exhibited typical semiconducting behavior from electrical resistance versus temperature measurements. The presented fabrication technique is a one step process for the simultaneous deposition, boron-doping, and patterning of the films, and hence may offer an effective way to directly fabricate boron-doped amorphous carbon-based devices without the need for templates, which is highly advantageous for applications.

引用

页数：4

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