Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor

被引:81
作者
Kim, Gwangmin [1 ]
In, Jae Hyun [1 ]
Kim, Young Seok [1 ]
Rhee, Hakseung [1 ]
Park, Woojoon [1 ]
Song, Hanchan [1 ]
Park, Juseong [1 ]
Kim, Kyung Min [1 ]
机构
[1] Korea Adv Inst Sci & Technol KAIST, Dept Mat Sci & Engn, Daejeon, South Korea
关键词
METAL-INSULATOR-TRANSITION; DYNAMICS; DEVICES;
D O I
10.1038/s41467-021-23184-y
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The intrinsic stochasticity of the memristor can be used to generate true random numbers, essential for non-decryptable hardware-based security devices. Here, we propose a novel and advanced method to generate true random numbers utilizing the stochastic oscillation behavior of a NbOx mott memristor, exhibiting self-clocking, fast and variation tolerant characteristics. The random number generation rate of the device can be at least 40kbs(-1), which is the fastest record compared with previous volatile memristor-based TRNG devices. Also, its dimensionless operating principle provides high tolerance against both ambient temperature variation and device-to-device variation, enabling robust security hardware applicable in harsh environments. Obtaining true random numbers is of great importance for cryptography, however, it can be challenging to obtain a large bit rate. Here, the authors make use of the oscillating behaviour of a Mott memristor, which exhibit rapid oscillations, and therefore a large bit rate, alongside impressive endurance.
引用
收藏
页数:8
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