Electrical analysis of organic interlayer based metal/interlayer/semiconductor diode structures

被引：55

作者：

Gullu, O. ^{[1
]}

Turut, A. ^{[2
]}

机构：

[1] Batman Univ, Fac Sci & Arts, Dept Phys, TR-72060 Batman, Turkey

[2] Ataturk Univ, Fac Sci, Dept Phys, TR-25240 Erzurum, Turkey

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 10期

关键词：

CAPACITANCE-VOLTAGE CHARACTERISTICS; SCHOTTKY-BARRIER DIODE; C-V CHARACTERISTICS; SI/AL CONTACTS; THIN-FILMS; SI; HEIGHT; COMPOUND; INHOMOGENEITIES; PARAMETERS;

D O I：

10.1063/1.3261835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, metal/interlayer/semiconductor (MIS) diodes formed by coating of an organic film to p-Si semiconductor substrate were prepared. Metal(Al)/interlayer (phenolsulfonphthalein=PSP)/semiconductor(p-Si) MIS device had a good rectifying behavior. By using the forward bias I-V characteristics, the values of ideality factor (n) and barrier height (Phi(b)) for the Al/PSP/p-Si MIS diode were obtained as 1.45 and 0.81 eV, respectively. It was seen that the Phi(b) value of 0.81 eV calculated for the Al/PSP/p-Si MIS diode was significantly larger than value of 0.50 eV of conventional Al/p-Si Schottky diodes. Modification of the interfacial potential barrier of Al/p-Si diode was achieved by using a thin interlayer of the PSP organic material. This has been attributed to the fact that the PSP organic interlayer increases the effective barrier height by influencing the space-charge region of Si. The interface-state density of the MIS diode was determined, and the interface-state density was found to vary from 3.00 x 10(13) to 2.99 x 10(12) eV(-1) cm(-2). (C) 2009 American Institute of Physics. [doi:10.1063/1.3261835]

引用

页数：6

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