A parabolic quantum well on a single dimer row of the Si(001) surface studied by scanning tunneling spectroscopy

被引：3

作者：

Sagisaka, K. ^{[1
]}

Fujita, D. ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Adv Nano Characterizat Ctr, Tsukuba, Ibaraki 3050047, Japan

来源：

PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY | 2008年 / 100卷

关键词：

STATE ELECTRONS; CONFINEMENT;

D O I：

10.1088/1742-6596/100/5/052002

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Quantum confinement in a single silicon dimer row of the Si(001) surface is presented with data obtained by scanning tunneling spectroscopy. The structure to confine surface electrons was made by depositing tungsten atoms on a silicon dimer row from the tip. The tungsten atoms not only scattered electrons, but also modified potential features of silicon dimers close to them, resulting in the reduction of the effective width of the quantum well. Confinement in this structure is, therefore, explained by a parabolic potential well.

引用

页数：4

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