New Superjunction LDMOS With the Complete Charge Compensation by the Electric Field Modulation

被引：28
作者：
Duan, Baoxing [1 ]
Yuan, Song [1 ]
Cao, Zhen [1 ]
Yang, Yintang [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Minist Educ, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 11期
基金：
中国国家自然科学基金;
关键词：
Super junction; LDMOS; electric field modulation; substrate-assisted depletion; breakdown voltage; ON-RESISTANCE;
D O I：
10.1109/LED.2014.2359293
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new superjunction (SJ) LDMOS has been proposed with the complete charge compensation by the electric field modulation in this letter for the first time. The substrate-assisted depletion, produced due to the p-type substrate for the n-channel SJ-LDMOS, has been eliminated by the electric field modulation produced due to the step n-type buffered layer. The charge for the n- and p-type drifts has been depleted completely. Moreover, a new electric field peak has been introduced in the surface electric field distribution, which makes the lateral surface electric field uniform. The breakdown voltage has been improved for the new SJ-LDMOS compared with the conventional SJ-LDMOS because of the uniform surface electric field. By simulating and experimental results, the breakdown voltage of the new SJ-LDMOS with the electric field modulation has been increased by similar to 49% compared with the conventional LDMOS, and improved by similar to 30% compared with the conventional SJ-LDMOS.
引用
收藏
页码：1115 / 1117
页数：3
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