Optical characterization and determination of conduction band offset of type-II GaAsSb/InGaAs QW

被引：9

作者：

Ryu, SW

Dapkus, PD

机构：

[1] Chonnam Natl Univ, Dept Phys, Kwangju 500757, South Korea

[2] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 12期

关键词：

D O I：

10.1088/0268-1242/19/12/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optical property of a GaAsSb/InGaAs type-II quantum well (QW) was studied and the conduction band discontinuity (DeltaE(c)) was determined by spatially indirect radiative transitions. DeltaE(c) between GaAs0.73Sb0.27 and In0.19Ga0.81As was measured to be -210 meV, which showed that the heterojunction was highly staggered. For the type-II QW, radiative transition efficiency was decreased with the increase of interband transition wavelength. It was explained by the reduction of overlap between electron and hole functions. By optimizing transition wavelength and efficiency of the type-II QW strong photoluminescence was observed around 1.3 mum at room temperature.

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收藏

页码：1369 / 1372

页数：4

相关论文

共 11 条

[1] STRAIN EFFECTS AND BAND OFFSETS IN GAAS/INGAAS STRAINED LAYERED QUANTUM STRUCTURES [J].

ARENT, DJ ;

DENEFFE, K ;

VANHOOF, C ;

DEBOECK, J ;

BORGHS, G .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (04) :1739-1747

[2] Above-room-temperature optically pumped midinfrared W lasers [J].

Bewley, WW ;

Felix, CL ;

Aifer, EH ;

Vurgaftman, I ;

Olafsen, LJ ;

Meyer, JR ;

Lee, H ;

Martinelli, RU ;

Connolly, JC ;

Sugg, AR ;

Olsen, GH ;

Yang, MJ ;

Bennett, BR ;

Shanabrook, BV .

APPLIED PHYSICS LETTERS, 1998, 73 (26) :3833-3835

[3] Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures an a GaAs substrate [J].

Cho, YH ;

Choe, BD ;

Lim, H .

APPLIED PHYSICS LETTERS, 1996, 69 (24) :3740-3742

[4] BAND LINEUP IN GAAS1-CHI-SB-CHI-GAAS STRAINED-LAYER MULTIPLE QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

JI, G ;

AGARWALA, S ;

HUANG, D ;

CHYI, J ;

MORKOC, H .

PHYSICAL REVIEW B, 1988, 38 (15) :10571-10577

[5] Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells [J].

Kudrawiec, R ;

Sek, G ;

Ryczko, K ;

Misiewicz, J ;

Harmand, JC .

APPLIED PHYSICS LETTERS, 2004, 84 (18) :3453-3455

[6] GROWTH AND PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS1-XSBX [J].

NAHORY, RE ;

POLLACK, MA ;

DEWINTER, JC ;

WILLIAMS, KM .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1607-1614

[7] REALIZATION AND MODELING OF A PSEUDOMORPHIC (GAAS1-XSBX-INYGA1-YAS)/GAAS BILAYER-QUANTUM WELL [J].

PETER, M ;

WINKLER, K ;

MAIER, M ;

HERRES, N ;

WAGNER, J ;

FEKETE, D ;

BACHEM, KH ;

RICHARDS, D .

APPLIED PHYSICS LETTERS, 1995, 67 (18) :2639-2641

[8] 1.3-mu m vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors [J].

Qian, Y ;

Zhu, ZH ;

Lo, YH ;

Hou, HQ ;

Wang, MC ;

Lin, W .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (01) :8-10

[9] Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates [J].

Ryu, SW ;

Dapkus, PD .

ELECTRONICS LETTERS, 2000, 36 (16) :1387-1388

[10] Room temperature operation of type-II GaAsSb/InGaAs quantum well laser on GaAs substrates [J].

Ryu, SW ;

Dapkus, PD .

ELECTRONICS LETTERS, 2002, 38 (12) :564-565