Hydrogen sensing characteristics of Pd/SiO2-nanoparticles (NPs)/AlGaN metal-oxide-semiconductor (MOS) diodes

被引：8

作者：

Chou, Po-Cheng ^{[1
]}

Chen, Huey-Ing ^{[2
]}

Liu, I. -Ping ^{[2
]}

Chen, Chun-Chia ^{[1
]}

Liou, Jian-Kai ^{[1
]}

Lai, Cheng-Jing ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

来源：

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | 2014年 / 39卷 / 35期

关键词：

Nanoparticles NPs; MOS; Schottky barrier height; Sensing response; Specific surface area; SENSOR; PERFORMANCE; TRANSISTOR;

D O I：

10.1016/j.ijhydene.2014.10.022

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A Pd/SiO2-nanoparticles (NPs)/AlGaN metal-oxide-semiconductor (MOS) structure is used to fabricate interesting Schottky diode-type hydrogen sensors. The employment of SiO2-NPs could effectively increase the specific surface area of Pd catalytic metal and the Schottky barrier height. Good hydrogen sensing performance is obtained. Experimentally, as compared to a conventional Pd/AlGaN MS diode, a significant 34.5-fold improvement on hydrogen sensing response is obtained under an introduced 1% H-2/air gas at 300 K when a 10 wt% concentration of SiO2-NPs is employed in the studied device. Yet, the increase in SiO2-NP concentration relatively deteriorates the ability to detect very low hydrogen concentration levels (<= 1 ppm H-2/air). In addition, the increase in SiO2-NP concentration creates a decrease and increase on response and recovery time constants of transient behaviors, respectively. Copyright (C) 2014, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.

引用

页码：20313 / 20318

页数：6

共 21 条

[21] Hydrogen sensing properties of a metamorphic high electron mobility transistor [J].

Tsai, Tsung-Han ;

Chen, Huey-Ing ;

Chang, Chung-Fu ;

Chiu, Po-Shun ;

Liu, Yi-Chun ;

Chen, Li-Yang ;

Chen, Tzu-Pin ;

Liu, Wen-Chau .

APPLIED PHYSICS LETTERS, 2009, 94 (01)

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