Hydrogen sensing characteristics of Pd/SiO2-nanoparticles (NPs)/AlGaN metal-oxide-semiconductor (MOS) diodes

被引：8
作者：
Chou, Po-Cheng [1 ]
Chen, Huey-Ing [2 ]
Liu, I. -Ping [2 ]
Chen, Chun-Chia [1 ]
Liou, Jian-Kai [1 ]
Lai, Cheng-Jing [1 ]
Liu, Wen-Chau [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan
来源：
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | 2014年 / 39卷 / 35期
关键词：
Nanoparticles NPs; MOS; Schottky barrier height; Sensing response; Specific surface area; SENSOR; PERFORMANCE; TRANSISTOR;
D O I：
10.1016/j.ijhydene.2014.10.022
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A Pd/SiO2-nanoparticles (NPs)/AlGaN metal-oxide-semiconductor (MOS) structure is used to fabricate interesting Schottky diode-type hydrogen sensors. The employment of SiO2-NPs could effectively increase the specific surface area of Pd catalytic metal and the Schottky barrier height. Good hydrogen sensing performance is obtained. Experimentally, as compared to a conventional Pd/AlGaN MS diode, a significant 34.5-fold improvement on hydrogen sensing response is obtained under an introduced 1% H-2/air gas at 300 K when a 10 wt% concentration of SiO2-NPs is employed in the studied device. Yet, the increase in SiO2-NP concentration relatively deteriorates the ability to detect very low hydrogen concentration levels (<= 1 ppm H-2/air). In addition, the increase in SiO2-NP concentration creates a decrease and increase on response and recovery time constants of transient behaviors, respectively. Copyright (C) 2014, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：20313 / 20318
页数：6
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