Optical properties and exciton binding energy and related parameters of CdTe: Pressure-induced effects

被引:8
作者
Bouarissa, N. [1 ]
Algarni, H. [2 ,3 ]
Al-Hagan, O. A. [2 ]
Khan, M. Ajmal [2 ]
Alhuwaymel, T. F. [4 ]
机构
[1] Univ Msila, Lab Mat Phys & Its Applicat, Msila 28000, Algeria
[2] King Khalid Univ, Fac Sci, Dept Phys, POB 9004, Abha 61413, Saudi Arabia
[3] King Khalid Univ, RCAMS, POB 9004, Abha 61413, Saudi Arabia
[4] KACST, Natl Ctr Nanotechnol, POB 6086, Riyadh 11442, Saudi Arabia
来源
OPTIK | 2018年 / 170卷
关键词
Pressure; Optical properties; Excitons; CdTe; Infrared; PSEUDOPOTENTIAL CALCULATIONS; REFRACTIVE-INDEX; GROUP-IV; III-V; CD1-XZNXTE; DEPENDENCE; GAPS; PHOTOLUMINESCENCE; PHASES;
D O I
10.1016/j.ijleo.2018.05.069
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The present paper reports on the hydrostatic pressure dependence of the direct and indirect energy band-gaps, refractive index, static and high-frequency dielectric constants, exciton banding energy and exciton Bohr radius for CdTe in the zinc-blende structure. The applied pressure is taken in the range 0-30 kbar. The calculations are performed using a pseudopotential approach. At zero pressure, our results show a good accord with experiment for most studied optical properties. Nevertheless, for exciton binding energy and Bohr radius the use of Adachi's expression [S. Adachi, Properties of Group-IV, III-V, and II-VI Semiconductors, Wiley, Chichester, 2005] has given poor results as compared to experiment. In this respect, a modified Adachi's expression formula have been proposed and found to give meaningful accord with experiment. Upon compression up to 30 kbar, the material of interest is found to remain a direct (Gamma-Gamma) band-gap semiconductor. All optical features being studied here have shown a monotonic behavior under compression. The present study can be useful for infrared applications.
引用
收藏
页码:37 / 42
页数:6
相关论文
共 40 条
[1]  
Adachi S, 2005, WILEY SER MATER ELEC, P1, DOI 10.1002/0470090340
[2]   Exciton and polaron properties in GaxIn1-xAs ternary mixed crystals [J].
Al Shhri, Halah ;
Bouarissa, Nadir ;
Khan, M. Ajmal .
JOURNAL OF LUMINESCENCE, 2011, 131 (10) :2153-2159
[3]   Pseudopotential calculations of AlSb under pressure [J].
Algarni, H. ;
Al-Hagan, O. A. ;
Bouarissa, N. ;
Khan, M. A. ;
Alhuwaymel, T. F. .
SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 2018, 190 :215-219
[4]  
[Anonymous], SEMICONDUCTORS SEMIM
[5]  
[Anonymous], 1993, B COLL MED SCI TOHOK
[6]   High-pressure phases of group IV and III-V semiconductors [J].
Auckland, GJ .
REPORTS ON PROGRESS IN PHYSICS, 2001, 64 (04) :483-516
[7]   ENERGY LEVELS OF DIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS [J].
BALDERESCHI, A ;
LIPARI, NO .
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :439-+
[8]   Energy band gaps for the GaxIn1-xAsyP1-y alloys lattice matched to different substrates [J].
Bechiri, A. ;
Bouarissa, N. .
SUPERLATTICES AND MICROSTRUCTURES, 2006, 39 (06) :478-488
[9]   Electron valence charge densities in Hg1-xCdxTe mixed crystals [J].
Bouarissa, N .
INFRARED PHYSICS & TECHNOLOGY, 1998, 39 (05) :265-270
[10]   Pressure dependence of optoelectronic properties of GaN in the zinc-blende structure [J].
Bouarissa, N .
MATERIALS CHEMISTRY AND PHYSICS, 2002, 73 (01) :51-56