Hall effect in Fe-Cr-Co alloy thin films

被引:2
作者
Chang, HC [1 ]
Chang, YH [1 ]
Yao, SY [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 01期
关键词
Hall effect; ion beam sputtering; Hall coefficient; high resolution transmission electron microscope; Hall resistivity; extraordinary Hall effects;
D O I
10.1143/JJAP.37.151
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper presents the Hall effect and microstructure of Fe-XCr-10Co, Fe-XCr-Co (weight ratio W-Fe/W-Co = 1), and Fe-60Cr-XCo alloy films. After deposition by ion beam sputtering (BS), the Hall voltage (VH) and Hall coefficient (RH) values of the as-deposited films were found to be small. After heat treatment, phase separation into eel (ferromagnetic phase) and alpha(2) (paramagnetic phase) was observed and verified by high resolution transmission electron microscope (HRTEM). By aging the Fe-60Cr-15Co films at 550 degrees C for 80 min, we found the maximum Hall resistivity (pH) and Hall voltage (VH) values which are 30 mu Omega-cm and 1.2mV, respectively (measured at 77 K and 14kOe). The extraordinary Hall coefficient (R-S) is about 0.408 cm(3)/C. The Hall coefficient is positive for both as-deposited and annealed films. The alloy composition and heat treatment condition which influence film's microstructure obviously affect the Hall property.
引用
收藏
页码:151 / 156
页数:6
相关论文
共 50 条
  • [31] The effect of substrate temperatures on the Hall coefficient of alpha-Mn thin films
    Boakye, F
    Adanu, KG
    Grassie, ADC
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 45 (1-3): : 50 - 54
  • [32] High-field Hall effect and magnetoresistance in Fe3O4 epitaxial thin films up to 30 Tesla
    Fernandez-Pacheco, A.
    Orna, J.
    De Teresa, J. M.
    Algarabel, P. A.
    Morellon, L.
    Pardo, J. A.
    Ibarra, M. R.
    Kampert, E.
    Zeitler, U.
    APPLIED PHYSICS LETTERS, 2009, 95 (26)
  • [33] Hall Effect and Resistivity in Epitaxial MnSi Thin Films Under Ambient and High Pressure
    Menzel, D.
    Schroeter, D.
    Steinki, N.
    Suellow, S.
    Scarioni, A. Fernandez
    Schumacher, H. W.
    Okuyama, H.
    Hidaka, H.
    Amitsuka, H.
    IEEE TRANSACTIONS ON MAGNETICS, 2019, 55 (02)
  • [34] Hall effect in La0.6Sr0.4MnO3 thin films
    Granada, M
    Maiorov, B
    Sirena, M
    Steren, LB
    Guimpel, J
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 272 : 1836 - 1838
  • [35] MnSi nanostructures obtained from epitaxially grown thin films: magnetotransport and Hall effect
    Schroeter, D.
    Steinki, N.
    Schilling, M.
    Scarioni, A. Fernandez
    Krzysteczko, P.
    Dziomba, T.
    Schumacher, H. W.
    Menzel, D.
    Suellow, S.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2018, 30 (23)
  • [36] HALL-EFFECT STUDIES ON AR AND XE SPUTTERED PT/CO MULTILAYER FILMS
    MALMHALL, R
    NAKAMURA, J
    AWANO, H
    NIIHARA, T
    OJIMA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (2B): : 442 - 446
  • [37] Hall effect and electronic structure of Co2FexMn1-xSi films
    Schneider, H.
    Vidal, E. Vilanova
    Chadov, S.
    Fecher, G. H.
    Felser, C.
    Jakob, G.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2010, 322 (06) : 579 - 584
  • [38] Hall effect and magnetoresistance measurements on permalloy Py thin films and Py/Cu/Py multilayers
    Volmer, M
    Neamtu, J
    Inta, I
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2002, 4 (01): : 79 - 84
  • [39] Hall effect of K-doped BaFe2As2 superconducting thin films
    Son, Eunseon
    Lee, Nam Hoon
    Hwang, Tae-Jong
    Kim, Dong Ho
    Kang, Won Nam
    PROGRESS IN SUPERCONDUCTIVITY AND CRYOGENICS, 2013, 15 (03): : 5 - 8
  • [40] Scaling behavior of mixed-state hall effect in MgB2 thin films
    Jung, Soon-Gil
    Seong, W. K.
    Kang, W. N.
    Choi, Eun-Mi
    Kim, Heon-Jung
    Lee, Sung-Ik
    Kim, Hyeong-Jin
    Kim, H. C.
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2006, 450 (1-2): : 114 - 117