Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers

被引：24

作者：

Baek, Seung-heon Chris ^{[1
]}

Seo, Yu-Jin ^{[1
]}

Oh, Joong Gun ^{[1
]}

Park, Min Gyu Albert ^{[1
]}

Bong, Jae Hoon ^{[1
]}

Yoon, Seong Jun ^{[1
]}

Seo, Minsu ^{[2
]}

Park, Seung-young ^{[2
]}

Park, Byong-Guk ^{[3
]}

Lee, Seok-Hee ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol KAIST, Dept Elect Engn, Taejon 305701, South Korea

[2] Korea Basic Sci Inst KBSI, Div Mat Sci, Taejon 305333, South Korea

[3] Korea Adv Inst Sci & Technol KAIST, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

STATES;

D O I：

10.1063/1.4893668

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report the alleviation of the Fermi-level pinning on metal/n-germanium (Ge) contact by the insertion of multiple layers of single-layer graphene (SLG) at the metal/n-Ge interface. A decrease in the Schottky barrier height with an increase in the number of inserted SLG layers was observed, which supports the contention that Fermi-level pinning at metal/n-Ge contact originates from the metal-induced gap states at the metal/n-Ge interface. The modulation of Schottky barrier height by varying the number of inserted SLG layers (m) can bring about the use of Ge as the next-generation complementary metal-oxide-semiconductor material. Furthermore, the inserted SLG layers can be used as the tunnel barrier for spin injection into Ge substrate for spin-based transistors. (C) 2014 AIP Publishing LLC.

引用

页数：4

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