Modulating the threshold voltage of oxide nanowire field-effect transistors by a Ga+ ion beam

被引：21
作者：
Li, Wenqing
Liao, Lei
Xiao, Xiangheng [1 ]
Zhao, Xinyue
Dai, Zhigao
Guo, Shishang
Wu, Wei
Shi, Ying
Xu, Jinxia
Ren, Feng
Jiang, Changzhong
机构：
[1] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
来源：
NANO RESEARCH | 2014年 / 7卷 / 11期
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
nanowire; field-effect transistor; ion irradiation; threshold voltage; WALLED CARBON NANOTUBES; ELECTRONIC TRANSPORT; IRRADIATION; SNO2; RAMAN; DEVICES; IN2O3; GATE;
D O I：
10.1007/s12274-014-0529-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this paper, we report a method to change the threshold voltage of SnO2 and In2O3 nanowire transistors by Ga+ ion irradiation. Unlike the results in earlier reports, the threshold voltages of SnO2 and In2O3 nanowire field-effect transistors (FETs) shift in the negative gate voltage direction after Ga+ ion irradiation. Smaller threshold voltages, achieved by Ga+ ion irradiation, are required for high-performance and low-voltage operation. The threshold voltage shift can be attributed to the degradation of surface defects caused by Ga+ ion irradiation. After irradiation, the current on/off ratio declines slightly, but is still close to similar to 10(6). The results indicate that Ga+ ion beam irradiation plays a vital role in improving the performance of oxide nanowire FETs.
引用
收藏
页码：1691 / 1698
页数：8
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