Nanostructured TiO x film on Si substrate: room temperature formation of TiSi x nanoclusters

被引:10
作者
Chiodi, Mirco [1 ,2 ]
Cavaliere, Emanuele [1 ]
Kholmanov, Iskandar [1 ,3 ]
de Simone, Monica [2 ]
Sakho, Oumar [2 ,4 ]
Cepek, Cinzia [2 ]
Gavioli, Luca [1 ,2 ]
机构
[1] Univ Cattolica Sacro Cuore, Dipartimento Matemat & Fis, I-25121 Brescia, Italy
[2] INFM, CNR, Lab Nazl TASC, SS 14, I-34012 Trieste, Italy
[3] CNR INFM SENSOR Lab, I-25133 Brescia, Italy
[4] Univ Cheikh Anta, Dept Phys, DIOP, Dakar, Senegal
关键词
TiSix; Cluster; Cluster-assembled TiOx; Silicide; Nanostructure; Thin film; Synthesis; RAY PHOTOELECTRON-SPECTROSCOPY; SILICIDE FORMATION; TI/SI(111) INTERFACE; METAL SILICIDES; THIN-FILMS; TITANIUM; PHASE; MICROSCOPY; DEPENDENCE; DEPOSITION;
D O I
10.1007/s11051-009-9843-3
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present a morphologic and spectroscopic study of cluster-assembled TiO (x) films deposited by supersonic cluster beam source on clean silicon substrates. Data show the formation of nanometer-thick and uniform titanium silicides film at room temperature (RT). Formation of such thick TiSi (x) film goes beyond the classical interfacial limit set by the Ti/Si diffusion barrier. The enhancement of Si diffusion through the TiO (x) film is explained as a direct consequence of the porous film structure. Upon ultra high vacuum annealing beyond 600 A degrees C, TiSi2 is formed and the oxygen present in the film is completely desorbed. The morphology of the nanostructured silicides is very stable for thermal treatments in the RT-1000 A degrees C range, with a slight cluster size increase, resulting in a film roughness an order of magnitude smaller than other TiO (x) /Si and Ti/Si films in the same temperature range. The present results might have a broad impact in the development of new and simple TiSi synthesis methods that favour their integration into nanodevices.
引用
收藏
页码:2645 / 2653
页数:9
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