Influential factors in low-temperature direct bonding of silicon dioxide

被引：0

作者：

Shirahama, Ryouya ^{[1
]}

Duangchan, Sethavut ^{[1
]}

Koishikawa, Yusuke ^{[1
]}

Baba, Akiyoshi ^{[1
]}

机构：

[1] Kyushu Inst Technol, Ctr Microelect Syst, 680-4 Kawasu, Iizuka, Fukuoka 8208502, Japan

来源：

2015 INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC 2015) | 2015年

关键词：

low temperature bonding; silicon dioxide; PE-CVD; surface activation; oxygen plasma activation; ROOM-TEMPERATURE;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We investigate the influential factor in low temperature bonding of silicon dioxide. Two surfaces were formed by thermal oxidation and plasma-enhanced chemical vapor deposition with 50 nm thick. Surface characterization by atomic force microscopy. Wafer cleaning by piranha, surface activated by oxygen plasma, pre-bonding at room temperature and post-bonding anneal by 100-400 degrees Celsius in 0.03 Pascal for 1 hour. Bonding area was tested by dicing machine that PECVD silicon dioxide showed weak bonding, whereas oxide from thermal oxidation showed good results between 200-400 degrees Celsius. Thus surface roughness and annealing temperature are an influential factor of low-temperature bonding of silicon dioxide.

引用

页数：5

共 17 条

[11] Low-Temperature Oxide Wafer Bonding for 3-D Integration: Chemistry of Bulk Oxide Matters [J].

Lin, Wei ;

Shi, Leathen ;

Yao, Yiping ;

Madan, Anita ;

Pinto, Teresa ;

Zavolas, Nick ;

Murphy, Richard ;

Skordas, Spyridon ;

Iyer, Subramanian .

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2014, 27 (03) :426-430

[12]

Nakagawa K., 2014, JPN J APPL PHYS, V53

[13] Studies on SiO2-SiO2 bonding with hydrofluoric acid.: Room temperature and low stress bonding technique for MEMS [J].

Nakanishi, H ;

Nishimoto, T ;

Nakamura, R ;

Yotsumoto, A ;

Yoshida, T ;

Shoji, S .

SENSORS AND ACTUATORS A-PHYSICAL, 2000, 79 (03) :237-244

[14]

Suga I., 2012, 2011 IEEE INT 3D SYS, P1

[15]

Tong Q.Y., 1998, Semiconductor Wafer Bonding: Science and Technology

[16] LOW-TEMPERATURE WAFER DIRECT BONDING [J].

TONG, QY ;

CHA, GH ;

GAFITEANU, R ;

GOSELE, U .

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 1994, 3 (01) :29-35

[17] Wafer bonding of silicon wafers covered with various surface layers [J].

Wiegand, M ;

Reiche, M ;

Gösele, U ;

Gutjahr, K ;

Stolze, D ;

Longwitz, R .

SENSORS AND ACTUATORS A-PHYSICAL, 2000, 86 (1-2) :91-95

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