Influential factors in low-temperature direct bonding of silicon dioxide

被引：0

作者：

Shirahama, Ryouya ^{[1
]}

Duangchan, Sethavut ^{[1
]}

Koishikawa, Yusuke ^{[1
]}

Baba, Akiyoshi ^{[1
]}

机构：

[1] Kyushu Inst Technol, Ctr Microelect Syst, 680-4 Kawasu, Iizuka, Fukuoka 8208502, Japan

来源：

2015 INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC 2015) | 2015年

关键词：

low temperature bonding; silicon dioxide; PE-CVD; surface activation; oxygen plasma activation; ROOM-TEMPERATURE;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We investigate the influential factor in low temperature bonding of silicon dioxide. Two surfaces were formed by thermal oxidation and plasma-enhanced chemical vapor deposition with 50 nm thick. Surface characterization by atomic force microscopy. Wafer cleaning by piranha, surface activated by oxygen plasma, pre-bonding at room temperature and post-bonding anneal by 100-400 degrees Celsius in 0.03 Pascal for 1 hour. Bonding area was tested by dicing machine that PECVD silicon dioxide showed weak bonding, whereas oxide from thermal oxidation showed good results between 200-400 degrees Celsius. Thus surface roughness and annealing temperature are an influential factor of low-temperature bonding of silicon dioxide.

引用

页数：5

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