High light-extraction efficiency in GaInN light-emitting diode with pyramid reflector

被引:2
作者
Xi, J. -Q. [1 ,2 ]
Luo, Hong [1 ,2 ]
Kim, Jong Kyu [1 ,3 ]
Schubert, E. F. [1 ,2 ,3 ]
机构
[1] Future Chips Constellat, Rensselaer Polytech Inst, 110 8th St, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
[3] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
来源
LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS XI | 2007年 / 6486卷
基金
美国国家科学基金会;
关键词
light-emitting diode; light-extraction efficiency; reflector; 3-dimensional reflector;
D O I
10.1117/12.707267
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A GaInN light-emitting diode (LED) that employs a new type of reflector consisting of an array of SiO2 pyramids and a reflective Ag layer is demonstrated to have enhanced light extraction compared to GaInN LEDs with a planar Ag reflector. Ray tracing simulations reveal that the pyramid reflector provides 14.1% enhancement in extraction efficiency. Consistent with the simulation, it is experimentally demonstrated that the GaInN LED employing the pyramid-patterned Ag reflector shows 13.9% higher light-output compared to the LED with a planar Ag reflector. In addition, the GaInN LED with pyramid reflector shows uniform light intensity due to current spreading beneath the SiO2 pyramid pattern. The enhancement is attributed to the appearance of an additional escape cone for light extraction, enabled by the change in direction of light rays reflected by the 3-dimensional pyramid reflector.
引用
收藏
页数:8
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