Theoretical Insights on Bandgap Engineering for Nanoribbons of the 2D Materials Family with Co-Adatoms

被引:7
作者
Sangani, Keyur [1 ]
Pandya, Ankur [2 ]
Jha, Prafulla K. [3 ]
机构
[1] Nirma Univ, Inst Sci, Ahmadabad 382481, Gujarat, India
[2] Nirma Univ, Inst Technol, Ahmadabad 382481, Gujarat, India
[3] Maharaja Sayajirao Univ Baroda, Fac Sci, Dept Phys, Vadodara 390002, India
关键词
Bandgap; resistivity; graphene; h-BN; silicene; germanene; stanene; phosphorene; acoustical deformation potential scattering; GRAPHENE; TRANSPORT; BORON; SCATTERING; SILICENE; GAPS;
D O I
10.1007/s11664-021-09039-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The bandgap tuning of two-dimensional (2D) materials is a vital step for their potential applications in the realm of nanoelectronics, optoelectronics, and spintronics. In this context, the bandgap of cobalt (Co)-adsorbed nanoribbons of novel 2D materials (for instance, graphene (GNR), h-BN (BNNR), silicene (SiNR), germanene (GeNR), stanene (SnNR), and phosphorene (PNR)) is investigated under the effect of a transverse magnetic field via an acoustical deformation potential (ADP) scattering mechanism. Bandgaps ranging from 1.10 eV to 1.42 eV were obtained for Co-adsorbed 2D nanoribbons, which display semiconducting behaviour. In addition to that, investigating the impact of temperature on the bandgap revealed an anomalous temperature dependence of the bandgap. The outcomes of the present work would be advantageous for developing transition metal (TM)-adsorbed-nanoribbon-based nanoelectronic and spintronic devices, wherein controlling their bandgap by employing a magnetic field is a useful tool for advancing nanoribbon-based technology.
引用
收藏
页码:5244 / 5249
页数:6
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