Ab initio nonadiabatic molecular dynamics of charge carriers in metal halide perovskites

被引:98
作者
Li, Wei [1 ]
She, Yalan [1 ]
Vasenko, Andrey S. [2 ,3 ]
Prezhdo, Oleg V. [4 ]
机构
[1] Hunan Agr Univ, Sch Chem & Mat Sci, Changsha 410128, Peoples R China
[2] HSE Univ, Moscow 101000, Russia
[3] Russian Acad Sci, PN Lebedev Phys Inst, IE Tamm Dept Theoret Phys, Moscow 119991, Russia
[4] Univ Southern Calif, Dept Chem, Los Angeles, CA 90089 USA
基金
美国国家科学基金会; 中国国家自然科学基金;
关键词
METHYLAMMONIUM LEAD IODIDE; ELECTRON-HOLE RECOMBINATION; HOT-PHONON BOTTLENECK; BIEXCITON AUGER RECOMBINATION; TEMPERATURE-DEPENDENCE; QUANTUM DYNAMICS; BAND-GAP; CH3NH3PBI3; PEROVSKITE; SOLAR-CELLS; PHOTOINDUCED DYNAMICS;
D O I
10.1039/d1nr01990b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Photoinduced nonequilibrium processes in nanoscale materials play key roles in photovoltaic and photocatalytic applications. This review summarizes recent theoretical investigations of excited state dynamics in metal halide perovskites (MHPs), carried out using a state-of-the-art methodology combining nonadiabatic molecular dynamics with real-time time-dependent density functional theory. The simulations allow one to study evolution of charge carriers at the ab initio level and in the time-domain, in direct connection with time-resolved spectroscopy experiments. Eliminating the need for the common approximations, such as harmonic phonons, a choice of the reaction coordinate, weak electron-phonon coupling, a particular kinetic mechanism, and perturbative calculation of rate constants, we model full-dimensional quantum dynamics of electrons coupled to semiclassical vibrations. We study realistic aspects of material composition and structure and their influence on various nonequilibrium processes, including nonradiative trapping and relaxation of charge carriers, hot carrier cooling and luminescence, Auger-type charge-charge scattering, multiple excitons generation and recombination, charge and energy transfer between donor and acceptor materials, and charge recombination inside individual materials and across donor/acceptor interfaces. These phenomena are illustrated with representative materials and interfaces. Focus is placed on response to external perturbations, formation of point defects and their passivation, mixed stoichiometries, dopants, grain boundaries, and interfaces of MHPs with charge transport layers, and quantum confinement. In addition to bulk materials, perovskite quantum dots and 2D perovskites with different layer and spacer cation structures, edge passivation, and dielectric screening are discussed. The atomistic insights into excited state dynamics under realistic conditions provide the fundamental understanding needed for design of advanced solar energy and optoelectronic devices.
引用
收藏
页码:10239 / 10265
页数:27
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