Molecular beam epitaxial growth of CdTe layers on InSb(111)A and B polar substrates

被引：12
作者：
Huerta-Ruelas, J
López-López, M
Zelaya-Angel, O
机构：
[1] IPN, Ctr Invest Ciencia Aplicada & Tecnol Avanzada, Unidad Queretaro, Queretaro 76040, Qro, Mexico
[2] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Dept Phys, Mexico City 07000, DF, Mexico
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 4A期
关键词：
molecular beam epitaxy; CdTe/InSb; RHEED; Auger electron spectroscopy; AFM; Raman spectroscopy;
D O I：
10.1143/JJAP.39.1701
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a study of CdTe layers grown by molecular beam epitaxy (MBE) on InSb(111)A and InSb(111)B substrates. The CdTe/lnSb(111) heterostructures, prepared under different conditions, were characterized in-situ by reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES). Ex-situ atomic force microscopy (AFM) and Raman spectroscopy were also applied. Our results indicate that In-Te compounds are formed at the interface. The concentrations of these compounds depend on substrate preparation, polarity of the (111) substrate, and annealing process before growth. As shown by RHEED and AFM, CdTe grows nearly two dimensionally on the (111)B surface, whereas on the A face a three dimensional growth, with polycrystalline regions, is obtained.
引用
收藏
页码：1701 / 1705
页数：5
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