Multiterminal Conductance of a Floquet Topological Insulator

被引:187
作者
Foa Torres, L. E. F. [1 ,2 ]
Perez-Piskunow, P. M. [1 ,2 ]
Balseiro, C. A. [3 ,4 ,5 ]
Usaj, Gonzalo [3 ,4 ,5 ]
机构
[1] Univ Nacl Cordoba, CONICET, Inst Fis Enrique Gaviola, RA-5000 Cordoba, Argentina
[2] Univ Nacl Cordoba, FaMAF, RA-5000 Cordoba, Argentina
[3] Comis Nacl Energia Atom, Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[4] Comis Nacl Energia Atom, Inst Balseiro, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[5] Consejo Nacl Invest Cient & Tecn, RA-1033 Buenos Aires, DF, Argentina
关键词
STATES; PHASE;
D O I
10.1103/PhysRevLett.113.266801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on simulations of the dc conductance and quantum Hall response of a Floquet topological insulator using Floquet scattering theory. Our results reveal that laser-induced edge states lead to quantum Hall plateaus once imperfect matching with the nonilluminated leads is lessened. The magnitude of the Hall plateaus, however, is not directly related to the number and chirality of all the edge states at a given energy, as usual. Instead, the plateaus are dominated by those edge states adding to the time-averaged density of states. Therefore, the dc quantum Hall conductance of a Floquet topological insulator is not directly linked to topological invariants of the full Floquet bands.
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页数:5
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