Oxide Neuromorphic Transistors Gated by Polyvinyl Alcohol Solid Electrolytes with Ultralow Power Consumption

被引：65

作者：

Guo, Li Qiang ^{[1
]}

Han, Hui ^{[2
,3
]}

Zhu, Li Qiang ^{[2
,3
]}

Guo, Yan Bo ^{[2
,3
]}

Yu, Fei ^{[2
,3
]}

Ren, Zheng Yu ^{[2
,3
]}

Xiao, Hui ^{[2
,3
]}

Ge, Zi Yi ^{[2
,3
]}

Ding, Jian Ning ^{[1
]}

机构：

[1] Jiangsu Univ, Micro Nano Sci & Technol Ctr, Zhenjiang 212013, Jiangsu, Peoples R China

[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Graphene Technol & Applicat Zhejiang Prov, Ningbo 315201, Zhejiang, Peoples R China

[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2019年 / 11卷 / 31期

关键词：

electrical double layer; oxide neuromorphic transistors; neuromorphic platforms; ultralow power consumption; ultrahigh sensitivity; SYNAPTIC PLASTICITY; MEMORY; ARRAY;

D O I：

10.1021/acsami.9b05717

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Neuromorphic devices and systems with ultralow power consumption are important in building artificial intelligent systems. Here, indium tin oxide (ITO)-based oxide neuromorphic transistors are fabricated using poly(vinyl alcohol) (PVA)-based proton-conducting electrolytes as gate dielectrics. The electrical performances of the transistors can be modulated with the ITO channel thickness. Fundamental synaptic functions, including excitatory postsynaptic current, paired-pulse facilitation, and multistore memory, are successfully emulated. Most importantly, the PVA-gated neuromorphic devices demonstrate ultralow energy consumption of similar to 1.16 fJ with ultrahigh sensitivity of similar to 5.4 dB, as very important for neuromorphic engineering applications. Because of the inherent environmental-friendly characteristics of PVA, the devices possess security biocompatibility. Thus, the proposed PVA-gated oxide neuromorphic transistors may find potential applications in "green" ultrasensitive neuromorphic systems and efficient electronic biological interfaces.

引用

页码：28352 / 28358

页数：7