Improved Resistive Switching Dispersion of NiOx Thin Film by Cu-Doping Method

被引：24
作者：
Liu, Chih-Yi [1 ]
Lin, Xin-Jie [1 ]
Wang, Hung-Yu [1 ]
Lai, Chun-Hung [2 ]
机构：
[1] Natl Kaohsiung Univ Appl Sci, Dept Elect Engn, Kaohsiung 807, Taiwan
[2] Natl United Univ, Dept Elect Engn, Miaoli 300, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 05期
关键词：
RANDOM-ACCESS MEMORY;
D O I：
10.1143/JJAP.49.056507
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thermally grown NiOx and Cu-doped NiOx (Cu:NiOx) thin films were fabricated as resistive layers for Cu/NiOx/Pt and Cu/Cu:NiOx/Pt devices and their resistive switching properties were investigated. The two devices had reversible resistive switching properties, nondestructive readout, and long retention. However, the Cu/NiOx/Pt device had large voltage dispersions in the resistive switching operation. This work improved the voltage dispersions of the resistive switching operation by Cu-doping in the NiOx thin film. The operating voltages of the Cu/Cu:NiOx/Pt device were also smaller than those of the Cu/NiOx/Pt device. This study suggests the conducting filament model to explain resistive switching behavior and improved resistive switching dispersions. The Cu-doping method produced more defects within the NiOx thin film, which improved voltage dispersion and decreased operation voltages. (c) 2010 The Japan Society of Applied Physics
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页码：0565071 / 0565074
页数：4
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