High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α-In2Se3

被引：20

作者：

Mech, Roop K. ^{[1
]}

Mohta, Neha ^{[1
]}

Chatterjee, Avijit ^{[1
]}

Selvaraja, Shankar Kumar ^{[1
]}

Muralidharan, Rangarajan ^{[1
]}

Nath, Digbijoy N. ^{[1
]}

机构：

[1] Indian Inst Sci, CeNSE, Bengaluru, Karnataka, India

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2020年 / 217卷 / 05期

关键词：

highest responsivity; indium selenide; self-powered; vertical metal-semiconductor-metal photodetectors; 2D materials; HIGH-PERFORMANCE; WORK-FUNCTION; LAYER MOS2; PHOTODETECTORS; HETEROJUNCTION; GRAPHENE; PHOTOTRANSISTORS; TRANSISTORS; CONTACTS;

D O I：

10.1002/pssa.201900932

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Herein, device demonstration based on vertical transport in multilayer alpha-In2Se3 is reported. Photodetectors realized using a metal/alpha-In2Se3/indium tin oxide (ITO) vertical junction exhibit clear signature of the band edge in spectral responsivity. The wavelength at 680 nm corresponding to an ultrahigh responsivity of 1000 A W-1 and a detectivity of >10(13) cm Hz(0.5) W-1 at a bias of 0.5 V. The variation of responsivity and detectivity with optical power density is studied, and a transient response of 20 ms is obtained for the devices (instrument limitation). In addition, an asymmetric barrier height arising out of ITO and Au contacts to a vertical alpha-In2Se3 junction resulted in a photovoltaic effect with V-OC approximate to 0.1 V and I-SC approximate to 0.4 mu A under an illumination of 520 nm.

引用

页数：9

共 50 条

[1] Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe [J].