Effects of Polysilane Addition to Chlorobenzene and High Temperature Annealing on CH3NH3PbI3 Perovskite Photovoltaic Devices

被引：19

作者：

Oku, Takeo ^{[1
]}

Taguchi, Masaya ^{[1
]}

Suzuki, Atsushi ^{[1
]}

Kitagawa, Kaede ^{[1
]}

Asakawa, Yugo ^{[1
]}

Yoshida, Satoshi ^{[1
]}

Okita, Masanobu ^{[2
]}

Minami, Satoshi ^{[2
]}

Fukunishi, Sakiko ^{[2
]}

Tachikawa, Tomoharu ^{[2
]}

机构：

[1] Univ Shiga Prefecture, Dept Mat Sci, Hikone, Shiga 5228533, Japan

[2] Osaka Gas Chem Co Ltd, Konohana Ku, 5-11-61 Torishima, Osaka 5540051, Japan

来源：

COATINGS | 2021年 / 11卷 / 06期

基金：

日本科学技术振兴机构;

关键词：

perovskite; CH3NH3PbI3; solar cells; polysilane; decaphenylcyclopentasilane; stability; chlorobenzene; calculation; Raman scattering; HOLE-TRANSPORT MATERIALS; LEAD IODIDE PEROVSKITES; SOLAR-CELLS; EFFICIENT; METHYLAMMONIUM; FORMAMIDINIUM; FABRICATION; STABILITY; CHLORIDE; PROGRESS;

D O I：

10.3390/coatings11060665

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CH3NH3PbI3 perovskite photovoltaic devices treated with a polysilane layer were fabricated and characterized. Decaphenylcyclopentasilane (DPPS) in chlorobenzene solution was deposited at the surface of the perovskite layer, and the resulting device was annealed at 140-260 degrees C. The photoconversion efficiencies of the DPPS-treated device remained high even after 255 days in ambient air. Raman scattering spectroscopy and ab initio molecular orbital calculations of DPPS suggested that it increased hole transport efficiency in the treated devices, which was confirmed from the high shunt resistances of the DPPS-treated devices.

引用

页数：14

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