Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

被引：2

作者：

Kuo, CH ^{[1
]}

Chang, SJ

Su, YK

Wu, LW

Sheu, JK

Wen, TC

Lai, WC

Tsai, JM

Chen, SC

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[3] Natl Cent Univ, Ctr Opt Sci, Chungli 320, Taiwan

[4] S Epitaxy Corp, Tainan 744, Taiwan

[5] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, Touliu 640, Taiwan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2003年 / 32卷 / 05期

关键词：

AlGaN; LED; MQW; MOCVD;

D O I：

10.1007/s11664-003-0169-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The In0.05Ga0.95N/GaN, In0.05Ga0.95N/Al0.1Ga0.9N, and In0.05Ga0.95N/AL(0.18)Ga(0.82)N multiple-quantum well (MQW) light-emitting diodes (LEDs) were prepared by metal-organic chemical-vapor deposition. (MOCVD). It was found that the 20-mA electroluminescence (EL) intensity of the InGaN/Al0.1Ga0.9N MQW LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum-output intensity and the fact that maximum-output intensity occurred at a larger injection current suggest that Al0.1Ga0.9N-barrier layers can provide a better carrier confinement and effectively reduce leakage current. In contrast, the EL intensity of the InGaN/Al0.18Ga0.82N MQW LED was smaller because of the relaxation that occurred in the MQW active region of the sample.

引用

页码：415 / 418

页数：4

共 20 条

[1]

BUNNER D, 1997, J APPL PHYS, V82, P5090

[2] High brightness green light emitting diodes with charge asymmetric resonance tunneling structure [J].

Chen, CH ;

Su, YK ;

Chang, SJ ;

Chi, GC ;

Sheu, JK ;

Chen, JF ;

Liu, CH ;

Liaw, YH .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (03) :130-132

[3] GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts [J].

Chen, CH ;

Chang, SJ ;

Su, YK ;

Chi, GC ;

Chi, JY ;

Chang, CA ;

Sheu, JK ;

Chen, JF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (08) :848-850

[4] Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching [J].

Chen, CHS ;

Chang, SJ ;

Su, YKI ;

Chi, GC ;

Sheu, JK ;

Lin, IC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (4B) :2762-2764

[5] AlGaN/GaN quantum well ultraviolet light emitting diodes [J].

Han, J ;

Crawford, MH ;

Shul, RJ ;

Figiel, JJ ;

Banas, M ;

Zhang, L ;

Song, YK ;

Zhou, H ;

Nurmikko, AV .

APPLIED PHYSICS LETTERS, 1998, 73 (12) :1688-1690

[6] On the carrier concentration and Hall mobility in GaN epilayers [J].

Ko, CH ;

Chang, SJ ;

Su, YK ;

Lan, WH ;

Chen, JF ;

Kuan, TM ;

Huang, YC ;

Chiang, CI ;

Webb, J ;

Lin, WJ .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (3A) :L226-L228

[7] Low temperature activation of Mg-doped GaN in O2 ambient [J].

Kuo, CH ;

Chang, SJ ;

Su, YK ;

Wu, LW ;

Sheu, JK ;

Chen, CH ;

Chi, GC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (2A) :L112-L114

[8] InGaN-AlInGaN multiquantum-well LEDs [J].

Lai, WC ;

Chang, SJ ;

Yokoyam, M ;

Sheu, JK ;

Chen, JF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (06) :559-561

[9]

Martin G, 1996, APPL PHYS LETT, V68, P2541, DOI 10.1063/1.116177

[10] VALENCE-BAND DISCONTINUITY BETWEEN GAN AND ALN MEASURED BY X-RAY PHOTOEMISSION SPECTROSCOPY [J].

MARTIN, G ;

STRITE, S ;

BOTCHKAREV, A ;

AGARWAL, A ;

ROCKETT, A ;

MORKOC, H ;

LAMBRECHT, WRL ;

SEGALL, B .

APPLIED PHYSICS LETTERS, 1994, 65 (05) :610-612

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