High-stress plasticity and the core structures of dislocations in silicon

被引：12

作者：

Rabier, J. ^{[1
]}

机构：

[1] Univ Poitiers, CNRS, UMR 6630, Met Phys Lab, F-86962 Futuroscope, France

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 07期

关键词：

DISSOCIATED DISLOCATIONS; SHUFFLE DISLOCATIONS; SCREW DISLOCATIONS; DEFORMATION; SI;

D O I：

10.1002/pssa.200675456

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The recent observation of perfect dislocations at high stress and low temperature in silicon [J. Rabier, P. Cordier, J. L. Demenet, and H. Garem, Mater. Sci. Eng. A 309/310, 74 (2001)] in accordance with the calculations of Duesbery and Joos [M. S. Duesbery and B. Joos, Philos. Mag. A 74, 253 (1996)] has solved the apparent paradox regarding the nature of mobile dislocations in silicon under usual deformation conditions. However, although several experiments and calculations are consistent with those perfect dislocations being located in the shuffle set, little is known about the actual core structure of those dislocations which lie along unusual Peierls valleys: < 112 >/30 degrees, < 123 >/41 degrees. This paper aims to review and discuss recent results related to high-stress plasticity and dislocation core structure in silicon. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2248 / 2255

页数：8

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