Enhanced Thermoelectric Properties of Selenium-Deficient Layered TiSe2-x: A Charge-Density-Wave Material

被引：23

作者：

Bhatt, Ranu ^{[1
]}

Bhattacharya, Shovit ^{[1
]}

Basu, Ranita ^{[1
]}

Ahmad, Sajid ^{[1
,2
]}

Chauhan, A. K. ^{[1
]}

Okram, G. S. ^{[4
]}

Bhatt, Pramod

Roy, Mainak ^{[3
]}

Navaneethan, M. ^{[5
]}

Hayakawa, Y. ^{[5
]}

Debnath, A. K. ^{[1
]}

Singh, Ajay ^{[1
]}

Aswal, D. K. ^{[1
]}

Gupta, S. K. ^{[1
]}

机构：

[1] Bhabha Atom Res Ctr, Tech Phys Div, Bombay 400085, Maharashtra, India

[2] Bhabha Atom Res Ctr, Astrophys Sci Div, Bombay 400085, Maharashtra, India

[3] Bhabha Atom Res Ctr, Div Chem, Bombay 400085, Maharashtra, India

[4] UGC DAE Consortium Sci Res, Indore 452001, Madhya Pradesh, India

[5] Shizuoka Univ, Elect Res Inst, Natl Univ Corp, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan

来源：

ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 21期

关键词：

thermoelectric material; layer microstructure; interfaces; lattice thermal conductivity; nanocrystalline materials; SUPERLATTICE FORMATION; SUPERCONDUCTIVITY; PERFORMANCE; TRANSITION;

D O I：

10.1021/am503477z

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In the present work, we report on the investigation of low-temperature (300-5 K) thermoelectric properties of hot-pressed TiSe2 a charge-density-wave (CDW) material. We demonstrate that, with increasing hot-pressing temperature, the density of TiSe2 increases and becomes nonstoichiometric owing to the loss of selenium. X-ray diffraction, scanning electron microscopy, and transimission electron microscopy results show that the material consists of a layered microstructure with several defects. Increasing the hotpress temperature in nonstoichiometric TiSe, leads to a reduction of the resistivity and enhancement of the Seebeck coefficient in concomitent with suppression of CDW. Samples hot-pressed at 850 degrees C exhibited a minimum thermal conductivity (kappa) of 1.5 W/m.K at 300 K that, in turn, resulted in a figure-of-merit (ZT) value of 0.14. This value is higher by 6 orders of magnitude compared to 1.49 X 10(-7) obtained for cold-pressed samples annealed at 850 degrees C. The enhancement of ZT in hot-pressed samples is attributed to (i) a reduced thermal conductivity owing to enhanced phonon scattering and (ii) improved power factor (alpha(2)sigma).

引用

页码：18619 / 18625

页数：7

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