GaN MOS device using SiO2-Ga2O3 insulator grown by photoelectrochemical oxidation method

被引：48

作者：

Lee, CT ^{[1
]}

Lee, HY ^{[1
]}

Chen, HW ^{[1
]}

机构：

[1] Natl Cent Univ, Inst Opt Sci, Chungli 32054, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 02期

关键词：

MOS devices; n-type GaN; photoelectrochemical (PEC) oxidation;

D O I：

10.1109/LED.2002.807711

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a SiO2 -Ga2O3 gate insulator stack directly grown on n-type GaN by the photoelectrochemical oxidation method. The resultant MOS devices are fabricated using the standard photolithography technique and liftoff technique. The effect of annealing temperature on the SiO2-Ga2O3/n-type GaN MOS devices are investigated. The properties of high breakdown field, low gate leakage current, and low interface state density were obtained for the MOS devices.

引用

收藏

页码：54 / 56

页数：3

相关论文

共 8 条

[1] 0.12-mu m gate III-V nitride HFET's with high contact resistances [J].

Burm, J ;

Chu, K ;

Schaff, WJ ;

Eastman, LF ;

Khan, MA ;

Chen, QH ;

Yang, JW ;

Shur, MS .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (04) :141-143

[2] Static measurements of GaN MESFETs on (111) Si substrates [J].

Hoël, V ;

Guhel, Y ;

Boudart, B ;

Gaquière, C ;

De Jaeger, JC ;

Lahrèche, H ;

Gibart, P .

ELECTRONICS LETTERS, 2001, 37 (17) :1095-1096

[3] AlGaN/GaN HEMTs on (111) silicon substrates [J].

Javorka, P ;

Alam, A ;

Wolter, M ;

Fox, A ;

Marso, M ;

Heuken, M ;

Lüth, H ;

Kordos, P .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (01) :4-6

[4] Long-term thermal stability of Ti/Al/Pt/Au Ohmic contacts to n-type GaN [J].

Lee, CT ;

Kao, HW .

APPLIED PHYSICS LETTERS, 2000, 76 (17) :2364-2366

[5] Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions [J].

Rotter, T ;

Mistele, D ;

Stemmer, J ;

Fedler, F ;

Aderhold, J ;

Graul, J ;

Schwegler, V ;

Kirchner, C ;

Kamp, M ;

Heuken, M .

APPLIED PHYSICS LETTERS, 2000, 76 (26) :3923-3925

[6] High-power 10-GHz operation of AlGaN HFET's on insulating SiC [J].

Sullivan, GJ ;

Chen, MY ;

Higgins, JA ;

Yang, JW ;

Chen, Q ;

Pierson, RL ;

McDermott, BT .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (06) :198-200

[7]

SZE SM, 1981, PHYSICS SEMICONDUCTO

[8] Metal-oxide-semiconductor capacitors formed by oxidation of polycrystalline silicon on SiC [J].

Tan, J ;

Das, MK ;

Cooper, JA ;

Melloch, MR .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2280-2281