Process and temperature insensitive GaAs voltage reference

被引：1

作者：

Frounchi, J ^{[1
]}

Harrold, SJ ^{[1
]}

机构：

[1] UMIST, Dept Elect Engn & Elect, Manchester M60 1QD, Lancs, England

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 04期

关键词：

Computer simulation - Integrated circuit layout - Logic gates - Semiconducting gallium arsenide;

D O I：

10.1049/el:19980201

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple GaAs voltage reference has been designed which has low sensitivity to the process parameters, and also has temperature compensated characteristics. The use of this design technique in SCFL digital circuits can result in a higher yield. The design technique can be applied to any IC technology offering square-law FET devices.

引用

页码：356 / 358

页数：3