Single electron tunneling at large conductance:: The semiclassical approach

被引:19
作者
Göppert, G [1 ]
Grabert, H [1 ]
机构
[1] Univ Freiburg, Fak Phys, D-79104 Freiburg, Germany
关键词
D O I
10.1007/s100510070187
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We study the linear conductance of single electron devices showing Coulomb blockade phenomena. Our approach is based on a formally exact path integral representation describing electron tunneling nonperturbatively. The electromagnetic environment of the device is treated in terms of the Caldeira-Leggett model. We obtain the linear conductance from the Kubo formula leading to a formally exact expression which is evaluated in the semiclassical limit. Specifically me consider three models. First, the influence of an electromagnetic environment of arbitrary impedance on a single tunnel junction is studied focusing on the limits of large tunneling conductance and high to moderately low temperatures. The predictions are compared with recent experimental data. Second, the conductance of an array of N tunnel junctions is determined in dependence on the length N of the array and the environmental impedance. Finally, we consider a single electron transistor and compare our results for large tunneling conductance with experimental findings.
引用
收藏
页码:687 / 704
页数:18
相关论文
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