Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN

被引：27

作者：

Cho, Chu-Young ^{[1
]}

Kang, Se-Eun ^{[1
]}

Kim, Ki Seok ^{[1
]}

Lee, Sang-Jun ^{[1
]}

Choi, Yong-Seok ^{[1
]}

Han, Sang-Heon ^{[1
,3
]}

Jung, Gun-Young ^{[1
]}

Park, Seong-Ju ^{[1
,2
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

[3] Samsung LED Co Ltd, Suwon 443743, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 18期

关键词：

epitaxial growth; gallium compounds; III-V semiconductors; light emitting diodes; MOCVD coatings; photonic crystals; silicon compounds; wide band gap semiconductors; SPONTANEOUS EMISSION; PLASMA DAMAGE; OUTPUT POWER; PERFORMANCE; EFFICIENCY; SURFACE;

D O I：

10.1063/1.3427352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the properties of green light-emitting diodes (LEDs) with a photonic crystal (PC) structure on p-GaN. A PC structure was fabricated by the selective area epitaxy of p-GaN using SiO(2) nanopillars. The electrical characteristics of LEDs with PC were not degraded and the optical output power of green LEDs with PC was increased by 70% at 20 mA of injection current compared with that of conventional LEDs without PC. This enhancement of optical output power was attributed to the improvement in light extraction efficiency by the SiO(2)/p-GaN PC layer on p-GaN. (C) 2010 American Institute of Physics. [doi:10.1063/1.3427352]

引用

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