Ultraviolet photoresponse of surface acoustic wave device based on Fe-doped high-resistivity GaN

被引：4
|
作者：
Fan, Yingmin [1 ]
Xu, Ke [1 ,2 ]
Liu, Zhenghui [1 ]
Xu, Gengzhao [1 ]
Zhong, Haijian [1 ]
Huang, Zengli [1 ]
Zhang, Yumin [1 ,2 ]
Wang, Jianfeng [1 ,2 ]
机构：
[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
[2] Suzhou Nanowin Sci & Technol Co Ltd, Suzhou 215123, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 05期
基金：
国家重点研发计划; 国家高技术研究发展计划(863计划);
关键词：
PERSISTENT PHOTOCONDUCTIVITY;
D O I：
10.7567/JJAP.56.050307
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The ultraviolet (UV) photoresponse of a surface acoustic wave (SAW) device fabricated on an Fe-doped high-resistivity GaN epitaxial film grown by hydride vapor phase epitaxy is investigated. The SAW device exhibits large variations in transmission characteristics under UV illumination, but shows a very low recovery rate after ceasing the illumination. Through the characterization of photocurrent and the simulation of the displacement field of Rayleigh wave, it is suggested that the persistent photoconductivity of the Fe-doped GaN is the origin of the retarded photoresponse of the SAW device, and that the wide surface depletion layer contributes to the large photoresponse of the SAW device. (C) 2017 The Japan Society of Applied Physics
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页数：4
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