Electrochemical deposition of zirconia on stainless steel has been investigated in order to provide supports of catalysts for NOx reduction. The zirconia films have been obtained in electrolytes based on anhydrons ethyl alcohol. The structure and chemical composition of the films have been characterized by SEM and XPS depth profiling. With rising cathodic voltage, the structure and morphology exhibit essential changes. The most porous structure corresponds to films formed at 21 V, whereas the highest density is achieved at 25 V, The XPS depth profiling data show that the composition in the bulk of the films is close to stoichiometric, The cross-section of an annealed film gives evidence for good adhesion to the substrate, The film thickness is 3-10 mu m, After annealing in air at 550 degrees C for 1 h, no cracks and inhomogeneities are observed. Copyright (C) 2000 John Wiley & Sons, Ltd.
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Indira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, India
Mishra, Maneesha
Kuppusami, P.
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Indira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, India
Kuppusami, P.
Singh, Akash
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Indira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, India
Singh, Akash
Ramya, S.
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Indira Gandhi Ctr Atom Res, Corros Sci & Technol Grp, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, India
Ramya, S.
Sivasubramanian, V.
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Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, India
Sivasubramanian, V.
Mohandas, E.
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Indira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, India
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East China Normal Univ, Sch Phys & Mat Sci, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Sch Phys & Mat Sci, Shanghai 200241, Peoples R China
Miao, Xiaohui
Chen, Ruizhi
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East China Normal Univ, Sch Phys & Mat Sci, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Sch Phys & Mat Sci, Shanghai 200241, Peoples R China
Chen, Ruizhi
Cheng, Wenjuan
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East China Normal Univ, Sch Phys & Mat Sci, Shanghai 200241, Peoples R ChinaEast China Normal Univ, Sch Phys & Mat Sci, Shanghai 200241, Peoples R China
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Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, IndiaAlagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
Mahalingam, T.
Thanikaikarasan, S.
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Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, IndiaAlagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
Thanikaikarasan, S.
Sundaram, K.
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Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, IndiaAlagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
Sundaram, K.
Raja, M.
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Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, IndiaAlagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
Raja, M.
Rhee, Jin-Koo
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Dongguk Univ, Dept Elect Engn, Millimeter Wave Innovat Technol MINT Res Ctr, Seoul 100715, South KoreaAlagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India