Two-dimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm

被引：59

作者：

Huang, CK ^{[1
]}

Zhang, WE ^{[1
]}

Yang, CH ^{[1
]}

机构：

[1] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 04期

关键词：

MOSFET; scaling; ultrasmall;

D O I：

10.1109/16.662789

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present simulation results of a silicon-based metal-oxide-semiconductor field effect transistors (MOSFET), which has a structure similar to that of a conventional MOSFET, but the source and drain regions are now entirely replaced by metals, Bg using abrupt metal/silicon Schottky junctions, short-channel effects are avoided, Based on a few commonly used physical assumptions, we have calculated the transistor characteristics, and me find that this new three-terminal transistor can offer gain and impedance isolation, desirable for logic circuit applications.

引用

页码：842 / 848

页数：7

共 22 条

[1]

CHENMING H, 1994, SEMIDONC INT, P105

[2] SEMICONDUCTING SILICIDE SILICON HETEROSTRUCTURES - GROWTH, PROPERTIES AND APPLICATIONS [J].

DERRIEN, J ;

CHEVRIER, J ;

LETHANH, V ;

MAHAN, JE .

APPLIED SURFACE SCIENCE, 1992, 56-8 :382-393

[3] SCALING THE MOS-TRANSISTOR BELOW 0.1 MU-M - METHODOLOGY, DEVICE STRUCTURES, AND TECHNOLOGY REQUIREMENTS [J].

FIEGNA, C ;

IWAI, H ;

WADA, T ;

SAITO, M ;

SANGIORGI, E ;

RICCO, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (06) :941-951

[4]

Frank D. J., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P553, DOI 10.1109/IEDM.1992.307422

[5] NEW STRUCTURAL APPROACH FOR REDUCING PUNCHTHROUGH CURRENT IN DEEP-SUBMICROMETER MOSFETS AND EXTENDING MOSFET SCALING [J].

HARELAND, SA ;

TASCH, AF ;

MAZIAR, CM .

ELECTRONICS LETTERS, 1993, 29 (21) :1894-1896

[6] A NEW TYPE OF TUNNEL-EFFECT TRANSISTOR EMPLOYING INTERNAL FIELD-EMISSION OF SCHOTTKY-BARRIER JUNCTION [J].

HATTORI, R ;

NAKAE, A ;

SHIRAFUJI, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (10B) :L1467-L1469

[7] NUMERICAL-SIMULATION OF TUNNEL EFFECT TRANSISTORS EMPLOYING INTERNAL FIELD-EMISSION OF SCHOTTKY-BARRIER JUNCTION [J].

HATTORI, R ;

SHIRAFUJI, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B) :612-618

[8] A NEW-TYPE OF SCHOTTKY TUNNEL TRANSISTOR [J].

KIMURA, M ;

MATSUDATE, T .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (10) :412-414

[9]

Lepselter M. P., 1968, P IEEE, V56, P1088

[10]

MANY A, 1965, SEMICONDUCTOR SURFAC

← 1 2 3 →