Simulation of GaN-based light-emitting devices

被引：0

作者：

Piprek, J ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Coll Engn, Dept Mat, Solid State Lighting & Display Ctr, Santa Barbara, CA 93106 USA

来源：

SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2004 | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Comprehensive physics-based simulations of GaN-based light-emitting diodes and laser diodes are presented. The talk discusses unique material properties of nitride compounds as well as performance-limiting physical mechanisms like self-heating, current crowding, and carrier leakage. Measurements are used to validate the models and to extract critical device parameters.

引用

页码：101 / 108

页数：8

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