Simulation of GaN-based light-emitting devices

被引：0

作者：

Piprek, J ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Coll Engn, Dept Mat, Solid State Lighting & Display Ctr, Santa Barbara, CA 93106 USA

来源：

SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2004 | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Comprehensive physics-based simulations of GaN-based light-emitting diodes and laser diodes are presented. The talk discusses unique material properties of nitride compounds as well as performance-limiting physical mechanisms like self-heating, current crowding, and carrier leakage. Measurements are used to validate the models and to extract critical device parameters.

引用

页码：101 / 108

页数：8

共 50 条

[1] GaN-based multiple quantum well light-emitting devices [J].

Koike, M ;

Iwayama, S ;

Yamasaki, S ;

Tezen, Y ;

Nagai, S ;

Kojima, A .

LIGHT-EMITTING DIODES: RESEARCH MANUFACTURING, AND APPLICATIONS V, 2001, 4278 :119-126

[2] Simulation of current spreading for GaN-based light-emitting diodes [J].

Wang, Pei ;

Wei, Wei ;

Cao, Bin ;

Gan, Zhiyin ;

Liu, Sheng .

OPTICS AND LASER TECHNOLOGY, 2010, 42 (05) :737-740

[3] Origin of forward leakage current in GaN-based light-emitting devices [J].

Lee, S. W. ;

Oh, D. C. ;

Goto, H. ;

Ha, J. S. ;

Lee, H. J. ;

Hanada, T. ;

Cho, M. W. ;

Yao, T. ;

Hong, S. K. ;

Lee, H. Y. ;

Cho, S. R. ;

Choi, J. W. ;

Choi, J. H. ;

Jang, J. H. ;

Shin, J. E. ;

Lee, J. S. .

APPLIED PHYSICS LETTERS, 2006, 89 (13)

[4] GaN-based MQW light emitting devices [J].

Koike, M ;

Yamasaki, S ;

Tezen, Y ;

Nagai, S ;

Iwayama, S ;

Kojima, A ;

Uemura, T ;

Hirano, A ;

Kato, H .

LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS IV, 2000, 3938 :24-29

[5] Introduction to the Special Issue on “Simulation of GaN-based Light-Emitting Diodes” [J].

Joachim Piprek .

Journal of Computational Electronics, 2015, 14 :381-381

[6] Introduction to the Special Issue on "Simulation of GaN-based Light-Emitting Diodes" [J].

Piprek, Joachim .

JOURNAL OF COMPUTATIONAL ELECTRONICS, 2015, 14 (02) :381-381

[7] GaN-based MQW light emitting devices [J].

Koike, M ;

Nagai, S ;

Yamasaki, S ;

Tezen, Y ;

Kojima, A ;

Iwayama, S .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (01) :9-13

[8] Improvement of Thermal Dissipation of GaN-Based Micro Cavity Light-Emitting Devices [J].

Chen, Yan-Hui ;

Mei, Yang ;

Xu, Huan ;

Xu, Rong-Bin ;

Ying, Lei-Ying ;

Zheng, Zhi-Wei ;

Long, Hao ;

Zhang, Bao-Ping .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2021, 33 (01) :19-22

[9] GaN-based light-emitting diodes suitable for white light [J].

Mukai, T ;

Yamada, M ;

Mitani, T ;

Narukawa, Y ;

Shioji, S ;

Niki, I ;

Sonobe, SY ;

Izuno, K ;

Suenaga, R .

LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS VII, 2003, 4996 :156-165

[10] The fabrication of GaN-based nanopillar light-emitting diodes [J].

Zhu, Jihong ;

Wang, Liangji ;

Zhang, Shuming ;

Wang, Hui ;

Zhao, Degang ;

Zhu, Jianjun ;

Liu, Zongshun ;

Jiang, Desheng ;

Yang, Hui .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (07)

← 1 2 3 4 5 →