Simulation of GaN-based light-emitting devices

被引：0
|
作者：
Piprek, J [1 ]
机构：
[1] Univ Calif Santa Barbara, Coll Engn, Dept Mat, Solid State Lighting & Display Ctr, Santa Barbara, CA 93106 USA
来源：
SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2004 | 2004年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Comprehensive physics-based simulations of GaN-based light-emitting diodes and laser diodes are presented. The talk discusses unique material properties of nitride compounds as well as performance-limiting physical mechanisms like self-heating, current crowding, and carrier leakage. Measurements are used to validate the models and to extract critical device parameters.
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页码：101 / 108
页数：8
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